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| SHINDENGEN Schottky Rectifiers (SBD) Dual SF30SC6 60V 30A FEATURES *oeTj150*Z OUTLINE DIMENSIONS Case : FTO-220 Unit : mm *oe PRRSM avalanche guaranteed *oe Fully Isolated Molding *oe Dielectric strength 2kV guaranteed APPLICATION *oe Switching power supply *oe DC/DC converter *oe Home Appliances, Office Equipment *oe Telecommunication RATINGS *oeAbsolute Maximum Ratings (If not specified Tc=25*Z) Item Symbol Conditions Ratings nit U Storage Temperature Tstg -55*150 *Z Operating Junction Temperature Tj 150 *Z Maximum Reverse Voltage V RM 60 V Repetitive Peak Surge Reverse Voltage 0.5ms, duty 1/40 V Pulse width RRSM 65 V Average Rectified Forward Current wave, R-load, Rating for each30 IO 50Hz sine diodeA Io/2, Tc= Peak Surge Forward Current IFSM 50Hz sine wave, Non-repetitive 1 cycle peak value, Tj=2 250 A Repetitive Peak Surge Reverse Power 10Es, Rating of per diode,660 W P Pulse width RRSM Tj=25*Z Dielectric Strength VdisTerminals to case, AC 1 minute 2 kV Mounting Torque TOR Recommended torque* 0.3Nm*j * i F 0.5 Nm *oeElectrical Characteristics (If not specified Tc=25*Z) Item Symbol Conditions Ratings nit U V IF F =15A, Pulse measurement, Rating of per diode Forward Voltage Max.0.63 V Reverse Current I V=V,M Pulse measurement, Rating ofMax.10mA R RR per diode Junction Capacitance Cj f=1MHz, V Rating of per diode Typ.500pF =10V, R Thermal Resistance AEjcunction to case j Max.1.6 *Z/W Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd SF30SC6 100 Forward Voltage 10 Forward Current IF [A] Tc=150C [MAX] Tc=150C [TYP] Tc=25C [MAX] 1 Tc=25C [TYP] Pulse measurement per diode 0.1 0 0.5 1 1.5 2 Forward Voltage VF [V] SF30SC6 Junction Capacitance f=1MHz Tc=25C TYP per diode Junction Capacitance Cj [pF] 1000 100 0.1 1 10 Reverse Voltage VR [V] SF30SC6 1000 Reverse Current Tc=150C [MAX] Tc=150C [TYP] 100 Tc=125C [TYP] Tc=100C [TYP] Reverse Current IR [mA] 10 Tc=75C [TYP] 1 0.1 Pulse measurement per diode 0.01 0 10 20 30 40 50 60 Reverse Voltage VR [V] SF30SC6 70 Reverse Power Dissipation DC D=0.05 0.1 0.2 0.3 Reverse Power Dissipation PR [W] 60 50 40 0.5 30 20 SIN 0.8 10 0 0 10 20 30 40 50 60 70 Reverse Voltage VR [V] Tj = 150C 0 VR tp D=tp /T T SF30SC6 35 Forward Power Dissipation DC Forward Power Dissipation PF [W] 30 0.5 D=0.8 25 0.3 20 0.1 15 0.05 0.2 SIN 10 5 0 0 10 20 30 40 50 Average Rectified Forward Current IO [A] Tj = 150C IO 0 tp D=tp /T T SF30SC6 50 Derating Curve Average Rectified Forward Current IO [A] DC 40 D=0.8 0.5 30 SIN 0.3 0.2 20 0.1 10 0.05 0 0 20 40 60 80 100 120 140 160 Case Temperature Tc [C] VR = 30V 0 0 IO VR tp D=tp /T T SF30SC6 400 Peak Surge Forward Capability IFSM 350 10ms 10ms 1 cycle Peak Surge Forward Current IFSM [A] 300 non-repetitive, sine wave, Tj=25C before surge current is applied 250 200 150 100 50 0 1 2 5 10 20 50 100 Number of Cycles [cycles] SBD 120 Repetitive Surge Reverse Power Derating Curve 100 PRRSM Derating [%] 80 60 40 20 0 0 50 100 150 Junction Temperature Tj [C] IRP IR 0.5IRP 0 tp PRRSM = IRP x VRP VR VRP SBD 10 Repetitive Surge Reverse Power Capability PRRSM p) / PRRSM p=10s) Ratio (t (t 1 0.1 1 10 100 Pulse Width t p [s] IRP IR 0.5IRP 0 tp PRRSM = IRP x VRP VR VRP |
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